Tailoring the Interfacial Properties of SbSI Nanowires via Doping in a Graphene Oxide Nano-compsite.

Driven by the escalating demand for high-performance optoelectronic materials, this study reports a novel in-situ synthesis of 1-dimensional (1D) antimony sulfoiodide nanowires (SbSI NWs) integrated onto graphene oxide (GO) nanosheets, a composite architecture previously undocumented in the literature. Structural validation via XRD and FTIR confirmed the successful formation of SbSI NWs (JCPDS 88-0988) and their synergistic coupling with GO, characterized by the attenuation of key functional groups. Morphological analysis indicated a reduction in NW length to ~3 µm within the hybrid nanocomposite. The doping process yielded a profound leap in electrical performance; the optimized H3 composite achieved an AC conductivity of 0.017 S/m, dramatically eclipsing both pristine GO and SbSI. Furthermore, the H3 composite exhibited superior electromagnetic interference (EMI) shielding, with shielding effectiveness (SER) surging from −20 dB to −56 dB. These findings position SbSI-doped GO as a formidable candidate for advanced electromagnetic attenuation and next-generation nano-electronics.